CP15G05 Aluminum Cold Plate with 6-Pass Copper tube, straight fittings

10 kΩ; ±1.0°C; Cylindrical Head; DIA 3.1x21 mm; Brass Nickel Plated

Polypropylene or 316L Stainless Steel Extension Tubes Float Switches A range of extension tubes available in Polypropylene or SS 316L, which extend the reach of the various vertical float switches. Polypropylene tubes, with either M12 or M16 threads, are intended for use with our plastic types of float switches and are available in 250mm, 500mm and 750mm lengths. The SS 316L extension tubes, with either 1/8BSP (G1/8) or 3/8BSP (G3/8), are intended for use with our stainless steel float switches.

2-13 µm; Active Area 0.0025-16 mm²; Responsivity ≥0.1-≥1.5 A/W; Detectivity ≥1.0x107-1.0×1012 cm·Hz1/2/W; Resistance 10-1,500 Ω; Package TO39, BNC, TO8, TO 66, PEM-SMA, PEM-TO8 Vigo System’s range of photovoltaic detectors (photodiodes) is based on semiconductor structures with one (PV/PVI) or multiple (PVM/PVMI) homo- or heterojunctions. Absorbed photons produce charge carriers that are collected at the contacts, resulting in external photocurrent. Photovoltaic detectors have complex current/voltage characteristics. The devices can operate either at flicker-free zero bias or with reverse voltage. Reverse bias voltage is frequently applied to increase responsivity, differential resistance, reduce the shot noise, improve high frequency performance and increase the dynamic range. Vigo System’s PV, PVI, PVM and PVMI series are based on sophisticated HgCdTe heterostructures for the best performance and stability. The devices are optimized for the maximum performance at λopt. The PV series features 2.5 µm to 6.5 μm HgCdTe uncooled, ambient temperature IR photovoltaic detectors. Cut on wavelength can be optimized upon request. Reverse bias may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. PV series devices are also available with 2 µm to 12 μm HgCdTe detectors that are thermoelectrically cooled by two-stage (PV-2TE series), three-stage (PV-3TE series) or even four-stage (PV-4TE series) TEC structures. These series are protected by a 3° wedged sapphire (wAl2O3) or zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects. The PVI series is optically immersed in order to further improve the parameters of the devices and also available either as 2.5 µm to 6.5 μm HgCdTe uncooled, ambient temperature IR photovoltaic detectors or as 2 µm to 12 μm HgCdTe detectors that are thermoelectrically cooled by two-stage (PVI-2TE series), three-stage (PVI-3TE series) or even four-stage (PVI-4TE series) TEC structures, again with a 3° wedged sapphire (wAl2O3) or zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects. Vigo System’s PVM series comprises of multiple junction uncooled, ambient temperature photovoltaic detectors, especially useful as large active area detectors operating within the spectral range of 2 µm to 13 μm. PVM series devices are also available as 2 µm to 12 μm HgCdTe two-stage thermoelectrically cooled photovoltaic multiple junction detectors (PVM-2TE series), protected by a 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects. The PVMI series is optically immersed in order to further improve the parameters of the devices. Corresponding to the PVM series, PVMI series components are also available either as 2 µm to 12 μm HgCdTe uncooled, ambient temperature multiple junction IR photovoltaic detectors or as 2 µm to 13 μm HgCdTe multiple junction detectors that are thermoelectrically cooled by two-stage (PVMI-2TE series), three-stage (PVMI-3TE series) or even four-stage (PVMI-4TE series) TEC structures, again with a 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window, preventing unwanted interference effects. Vigo System’s PEM series includes 2 µm to 12 μm HgCdTe uncooled, ambient temperature photovoltaic IR detectors based on the photoelectromagnetic effect in the semiconductor – spatial separation of optically generated electrons and holes in the magnetic field. The PEMI series features the optically immersed versions of these devices. Both series are designed for the maximum performance at 10.6 μm and especially useful as a large active area detectors to detect CW and low frequency modulated radiation. These devices are mounted in specialized packages with an incorporated magnetic circuit inside. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) windows prevent unwanted interference effects and protect against pollution. For its range of PV/PVI/PVM/PVMI/PEM/PEMI HgCdTe (MCT) photovoltaic detectors, Vigo System provides a broad range of selected line or configurable line infrared (IR) detection modules that integrate the IR photodetector with the preamplifier and – depending on the module series – also signal processing electronics, optics, heat dissipation systems and other components in a common package. Key Features: High Performance, Reliability and Repeatability in Mass Production Cost-effective Solutions Fast Delivery Active Element Material: Epitaxial HgCdTe Heterostructure Optimal Wavelength λopt: 3.0 to 10.6 μm With or Without Immersion Microlens Technology Uncooled, Room Temperature Operation or Thermoelectrically Cooled (2-Stage, 3-Stage or 4-Stage) Detectivity D*: ≥2.0x107 to ≥1.0×1012 cm·Hz1/2/W (λpeak, 20 kHz), ≥1.0×107 to ≥8.0×1011 cm·Hz1/2/W (λopt, 20 kHz) Different Sizes of Active/Optical Area A(O): 0.05×0.05 mm² to 4×4 mm² Current Responsivity Ri(λopt): ≥0.1 to ≥1.5 A/W Current Responsivity-Active (Optical) Area Length Product Ri(λopt)·L(O) (PVM, PVMI (Non-TE), PEM, PEMI Series): ≥0.002 to ≥0.04 A·mm/W Resistance R (PVM, PVMI, PEM, PEMI Series): 20 to 1,500 Ω Resistance-Active (Optical) Area Product (RxA(O)): ≥0.0001 to ≥30,000 Ω·cm2 Short Time Constant τ: ≤1.5 ns (PVM, PVMI), ≤1.2 ns (PEM, PEMI) to ≤350 ns No Bias Required PV, PVI Series Bandwidth: Tens of MHz Without Reverse Bias, ≥1GHz With Reverse Bias No 1/f Noise Active Element Temperature Tdet: ~195 to ~230 K (TE-cooled Versions) Different Acceptance Angles Φ: ~36° to ~124° Different Packages: TO39, BNC, TO8, TO 66, PEM-SMA, PEM-TO8 Different Infrared Windows: None, wAl2O3, wZnSeAR Wide Range of Dedicated Preamplifiers and Accessories Available Applications: Industrial; Medical; Automotive; Environmental; Laser Power Control and Calibration; Gas Analysis; Mid-IR Spectroscopy; Gas Leak Detection; Air Quality Analysis; Water Quality Control; Engine Emission Monitoring and Control; Fuel Quality Assessment; Analysis of Temperature Distribution; Railway Transport Safety; Plastic Sorting; Security and Defense